Daily Papers

As multi-turn dialogues with large language models (LLMs) grow longer and more complex, how can users better evaluate and review progress on their conversational goals? We present OnGoal, an LLM chat interface that helps users better manage goal progress. OnGoal provides real-time feedback on goal alignment through LLM-assisted evaluation, explanations for evaluation results with examples, and overviews of goal progression over time, enabling users to navigate complex dialogues more effectively. Through a study with 20 participants on a writing task, we evaluate OnGoal against a baseline chat interface without goal tracking. Using OnGoal, participants spent less time and effort to achieve their goals while exploring new prompting strategies to overcome miscommunication, suggesting tracking and visualizing goals can enhance engagement and resilience in LLM dialogues. Our findings inspired design implications for future LLM chat interfaces that improve goal communication, reduce cognitive load, enhance interactivity, and enable feedback to improve LLM performance.

This study systematically investigates the photoconductive properties of low-temperature-grown Beryllium (Be)-doped InGaAs/InAlAs strain-balanced superlattices (SLs) grown by molecular beam epitaxy under stationary growth conditions on semi-insulating InP:Fe substrates. The stationary growth approach enabled precise control over lateral gradients in layer strain, composition, and thickness across a single wafer, while strain-balancing facilitated pseudomorphic growth to explore a wide range of structural parameters, providing a robust platform to study their influence on photoconductive performance. Structural characterization confirmed high crystalline quality and smooth surface morphology in all samples. Time-resolved pump-probe spectroscopy revealed subpicosecond carrier lifetimes, validating the effectiveness of strain balancing and Be doping in tuning ultrafast recombination dynamics. Hall effect measurements supported by 8-band k.p modeling revealed enhanced carrier mobility in strain-balanced SLs compared to lattice-matched structures, primarily due to reduced electron and hole effective masses and stronger quantum confinement. Additionally, optical absorption under 1550 nm excitation showed improved absorption coefficients for the strain-balanced structure, consistent with the reduction in bandgap energy predicted by theoretical modeling, thereby enhancing photon-to-carrier conversion efficiency. Furthermore, transmission electron microscopy provided first-time evidence of significant Be-induced interdiffusion at the strained SL interfaces, an important factor influencing carrier transport and dynamics. These findings position low-temperature-grown Be-doped InGaAs/InAlAs strain-balanced SLs as promising materials for high-performance broadband THz photoconductive detectors operating at telecom-compatible wavelengths.